JPH027189B2 - - Google Patents
Info
- Publication number
- JPH027189B2 JPH027189B2 JP55104506A JP10450680A JPH027189B2 JP H027189 B2 JPH027189 B2 JP H027189B2 JP 55104506 A JP55104506 A JP 55104506A JP 10450680 A JP10450680 A JP 10450680A JP H027189 B2 JPH027189 B2 JP H027189B2
- Authority
- JP
- Japan
- Prior art keywords
- impurity region
- layer
- conductivity type
- polycrystalline silicon
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10450680A JPS5730361A (en) | 1980-07-30 | 1980-07-30 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10450680A JPS5730361A (en) | 1980-07-30 | 1980-07-30 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5730361A JPS5730361A (en) | 1982-02-18 |
JPH027189B2 true JPH027189B2 (en]) | 1990-02-15 |
Family
ID=14382374
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10450680A Granted JPS5730361A (en) | 1980-07-30 | 1980-07-30 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5730361A (en]) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59192410A (ja) * | 1983-04-12 | 1984-10-31 | Toyoda Mach Works Ltd | 回転刃具を備えた加工装置 |
-
1980
- 1980-07-30 JP JP10450680A patent/JPS5730361A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5730361A (en) | 1982-02-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3057661B2 (ja) | 半導体装置 | |
US4794563A (en) | Semiconductor memory device having a high capacitance storage capacitor | |
JP2733911B2 (ja) | 半導体素子及びその製造方法 | |
EP0112670A1 (en) | Semiconductor memory device having stacked capacitor-tape memory cells | |
JPH09205181A (ja) | 半導体装置 | |
JPS6155258B2 (en]) | ||
US5068698A (en) | MOS semiconductor device having high-capacity stacked capacitor | |
JPS62190869A (ja) | 半導体記憶装置 | |
JP2676168B2 (ja) | 半導体装置 | |
JP2759631B2 (ja) | 半導体メモリセル及びその製造方法 | |
JPH027189B2 (en]) | ||
EP0234741B1 (en) | Semiconductor memory device | |
JP2000114475A (ja) | スタックトキャパシタメモリセルおよびその製造方法 | |
JPS62155557A (ja) | 半導体記憶装置 | |
JPH0795566B2 (ja) | 半導体メモリ装置 | |
JPH0746700B2 (ja) | 1トランジスタ型dram装置 | |
JPH03205868A (ja) | Mis型半導体記憶装置 | |
JP2554332B2 (ja) | 1トランジスタ型ダイナミツクメモリセル | |
JPS6110271A (ja) | 半導体装置 | |
KR900007233B1 (ko) | 반도체장치 | |
JPS58213461A (ja) | 半導体装置 | |
JPS63209159A (ja) | 1トランジスタ型ダイナミツクメモリセル | |
US6110776A (en) | Method for forming bottom electrode of capacitor | |
JPH0529574A (ja) | 半導体装置の製造方法 | |
JPS5810864B2 (ja) | 半導体記憶装置 |